Growth of Cd0.9Zn0.1Te1-ySey Crystals for Radiation Detection Applications

Keywords

A^IIB^VI compounds, doping, semiconductor detectors, Bridgman method

References

1. Roy U.N., Camarda G.S., James Y. and Cui R.B. Optimization of selenium in CdZnTeSe quaternary compound for radiation detector applications // Appl. Phys. Lett. – 2021. – 118. – No. 152101. https://doi.org/10.1063/5.0048875
2. Park B., Kim Y., Seo J., Byun J., Dedic V., Franc J., Bolotnikov A.E., James R.B. and Kim K. Bandgap engineering of Cd1−xZnxTe1−ySey (0<x<0.27, 0<y<0.026) // Nucl. Instrum. and Methods in Physics Research Section A. – 2022. – 1036. – No. 166836. https://doi.org/10.1016/j.nima.2022.166836

Crystals of solid solutions Cd0.9Zn0.1Te1-ySey with selenium concentration y = 0.02 – 0.07 were grown by the vertical Bridgman method under high pressure of argon gas (up to 26 atm) in graphite crucibles. The obtained crystals are characterized by the crystal structure similar to Cd0.9Zn0.1Te crystals. The distributions of the elemental composition in grown crystals were studied for different ways of raw materials loading. To obtain high-resistivity (detector) crystals an additional doping with Indium was carried out.